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Vishay GA200SA60UP User Manual

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Document Number: 94364 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 29-Apr-08 1
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
GA200SA60UP
Vishay High Power Products
FEATURES
• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz
in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 V
AC/RMS
)
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• UL pending
• Completely lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical) 1.60 V
V
GE
15 V
I
C
100 A
SOT-227
C
G
E
n-channel
RoH
S
COMPLIAN
T
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 200
A
T
C
= 100 °C 100
Pulsed collector current I
CM
400
Clamped inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 2.0 Ω,
See fig. 13a
400
Gate to emitter voltage V
GE
± 20 V
Reverse voltage avalanche energy E
ARV
Repetitive rating; pulse width limited
by maximum junction temperature
160 mJ
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Maximum power dissipation P
D
T
C
= 25 °C 500
W
T
C
= 100 °C 200
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150 °C
Mounting torque 6-32 or M3 screw 1.3 (12)
N ⋅ m
(lbf ⋅ in)
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
thJC
-0.25
°C/W
Case to sink, flat, greased surface R
thCS
0.05 -
Weight of module 30 - g
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Summary of Contents

Page 1 - GA200SA60UP

Document Number: 94364 For technical questions, contact: [email protected]: 29-Apr-08 1Insulated Gate Bipolar Transistor(U

Page 2

www.vishay.com For technical questions, contact: [email protected] Number: 943642 Revision: 29-Apr-08GA200SA60UPVishay High Power Produc

Page 3 - Vishay High Power Products

Document Number: 94364 For technical questions, contact: [email protected]: 29-Apr-08 3GA200SA60UPInsulated Gate Bipolar T

Page 4

www.vishay.com For technical questions, contact: [email protected] Number: 943644 Revision: 29-Apr-08GA200SA60UPVishay High Power Produc

Page 5

Document Number: 94364 For technical questions, contact: [email protected]: 29-Apr-08 5GA200SA60UPInsulated Gate Bipolar T

Page 6

www.vishay.com For technical questions, contact: [email protected] Number: 943646 Revision: 29-Apr-08GA200SA60UPVishay High Power Produc

Page 7 - Legal Disclaimer Notice

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1DisclaimerLegal Disclaimer NoticeVishay All product specifications and data are subject t

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